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| PD- 95299 IRF7342D2PBF Co-packaged HEXFET(R) Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET(R) l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = -55V RDS(on) = 105m Schottky Vf = 0.61V Top View The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current A Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 20 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Symbol RJL RJA RJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY Typ. --- --- --- Max. 20 62.5 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 10/13/04 IRF7342D2PBF V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.054 95 150 --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 Typ. --- --- --- 54 85 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 105 VGS = -10V, ID = -3.4A m 170 VGS = -4.5V, ID = -2.7A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.1A -2.0 VDS = -44V, VGS = 0V A -25 VDS = -44V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 38 ID = -3.1A 4.5 nC VDS = -44V 13 VGS = -10V, See Fig. 6 & 14 22 VDD = -28V 15 ID = -1.0A ns 64 RG = 6.0 32 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -2.0 A -27 -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 80 ns TJ = 25C, IF = -2.0A 130 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 57C See Fig. 21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Schottky Diode Maximum Ratings If (av) ISM Max. Units 3.0 A 490 70 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward Voltage Drop Max. Units 0.61 0.76 V 0.53 0.65 60 V 2.0 mA 30 145 pF Conditions If = 3.0A, Tj = 25C If = 6.0A, Tj = 25C If = 3.0A, Tj = 125C If = 6.0A, Tj = 125C Vr = 60V Tj = 25C Tj = 125C Vrrm Irm Ct Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Junction Capacitance Vr = 5Vdc ( 100kHz to 1 MHz) 25C 2 www.irf.com IRF7342D2PBF Power Mosfet Characteristics 100 VGS TOP -15V -10V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V 100 VGS -15V -10V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 1 -2.5V 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -2.5V 0.1 0.1 1 20s PULSE WIDTH Tj = 25C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -3.4 A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 1.0 1 0.5 0.1 2.0 V DS = -25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7342D2PBF Power Mosfet Characteristics 1000 800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -3.1A 16 VDS =-48V VDS =-30V VDS =-12V C, Capacitance (pF) 600 Ciss 12 400 8 200 Coss Crss 1 10 100 4 0 0 - -VDS , Drain-to-Source Voltage (V) 0 10 20 30 40 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 -ID , Drain Current (A) I 10 100us TJ = 150 C TJ = 25 C 1 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7342D2PBF Power Mosfet Characteristics 3.5 V DS 3.0 RD V GS RG V GS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -ID , Drain Current (A) 2.0 1.5 1.0 0.5 VGS Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - 2.5 V DD 5 IRF7342D2PBF Power Mosfet Characteristics RDS ( on ) , Drain-to-Source On Resistance ) ( ( , RDS(on) Drain-to -Source On Resistance) 0.25 0.35 0.30 0.25 0.20 0.15 VGS = -10V 0.10 0.05 0.0 4.0 8.0 12.0 16.0 -ID , Drain Current ( A ) VGS = -4.5V 0.20 0.15 ID = -3.4A 0.10 0.05 3.0 5.0 7.0 9.0 11.0 13.0 15.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7342D2PBF Power Mosfet Characteristics 2.0 100 1.8 ID = -250A 80 -VGS(th) ( V ) 1.6 Power (W) 60 1.4 40 1.2 20 1.0 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7342D2PBF Schottky Diode Characteristics 100 100 T J= 150C Reverse Current - I R (mA) 10 125C 100C 75C 0.1 50C 1 Instantaneous Forward Current - I F (A) 0.01 25C T J= 150C T J= 125C 10 T J= 25C 0.001 0 10 20 30 40 50 60 Reverse Voltage - V R (V) Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) T J= 25C 100 1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Forward Voltage Drop - V FM (V) Fig. 17 - Maximum Forward Voltage Drop Characteristics 10 0 10 20 30 40 50 60 Reverse Voltage - V R(V) Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage 8 www.irf.com IRF7342D2PBF Schottky Diode Characteristics 100 Thermal Response(Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D =t 1 / t 2 2. Peak T = P DM x ZthJA + TA J 1 10 100 10 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V applied R Average Forward Current - F(AV) (A) I Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR www.irf.com 9 IRF7342D2PBF SO-8 (Fetky) Package Outline D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONF ORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO E XCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGTH OF LEAD F OR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INTERNAT IONAL RECT IFIER LOGO XXXX 807D1 10 www.irf.com IRF7342D2PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 11 |
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